Technische Details IRFL024N
- MOSFET, N SOT-223
- Transistor Type:MOSFET
- Transistor Polarity:N
- Cont Current Id:4A
- On State Resistance:0.075ohm
- Case Style:SOT-223
- Termination Type:SMD
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Voltage Vds:55V
- Max Voltage Vgs th:4V
- No. of Transistors:1
- Power Dissipation:2.1W
- Power Dissipation Pd:2.1W
- Pulse Current Idm:11.2A
- SMD Marking:FL024N
- Transistor Case Style:SOT-223
Weitere Produktangebote IRFL024N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRFL024N | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 55V 2.8A SOT223Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
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