Technische Details IRFL024NTRPBF Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Weitere Produktangebote IRFL024NTRPBF nach Preis ab 0.38 EUR bis 1.5 EUR
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IRFL024NTRPBF | Infineon Technologies |
 MOSFETs MOSFT 55V 4A 75mOhm 12.2nC |
auf Bestellung 2964 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFL024NTRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFL024NTRPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 2.8A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFL024NTRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 34 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRFL024NTRPBF | International Rectifier |
MOSFET N-CH 55V 2.8A SOT-223 Транзистори |
auf Bestellung 782 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFL024NTRPBF | International Rectifier/Infineon |
N-канальний ПТ, Udss, В = 55, Id = 2,8 А, Ptot, Вт = 1, Тип монт. = smd, Ciss, пФ @ Uds, В = 400 @ 25, Qg, нКл = 18,3 @ 10 В, Rds = 75 мОм @ 2,8 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: SOT-223 Од. вим: шт Anzahl je Verpackung: 2500 Stücke |
verfügbar 155 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| IRFL024NTRPBF |
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Hersteller: Infineon Technologies
MOSFETs MOSFT 55V 4A 75mOhm 12.2nC
MOSFETs MOSFT 55V 4A 75mOhm 12.2nC
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.5 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.48 EUR |
| 2500+ | 0.43 EUR |
| 5000+ | 0.38 EUR |
| IRFL024NTRPBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFL024NTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 55V 2.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| IRFL024NTRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFL024NTRPBF |
|
Hersteller: International Rectifier
MOSFET N-CH 55V 2.8A SOT-223 Транзистори
MOSFET N-CH 55V 2.8A SOT-223 Транзистори
auf Bestellung 782 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 1.32 EUR |
| IRFL024NTRPBF |
|
Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 55, Id = 2,8 А, Ptot, Вт = 1, Тип монт. = smd, Ciss, пФ @ Uds, В = 400 @ 25, Qg, нКл = 18,3 @ 10 В, Rds = 75 мОм @ 2,8 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: SOT-223 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
N-канальний ПТ, Udss, В = 55, Id = 2,8 А, Ptot, Вт = 1, Тип монт. = smd, Ciss, пФ @ Uds, В = 400 @ 25, Qg, нКл = 18,3 @ 10 В, Rds = 75 мОм @ 2,8 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: SOT-223 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
verfügbar 155 Stücke: