Technische Details IRFL214 Vishay/IR
Description: MOSFET N-CH 250V 790MA SOT223, Packaging: Tube, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 790mA (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.
Weitere Produktangebote IRFL214
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IRFL214 Produktcode: 1077
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Lieblingsprodukt
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Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: SOT-223 Uds,V: 250 Idd,A: 0.79 Rds(on), Ohm: 2 Ciss, pF/Qg, nC: 02.08.140 JHGF: SMD |
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IRFL214 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 790MA SOT223 Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 790mA (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFL214 | Hersteller : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRFL214TRPBF |
Produkt ist nicht verfügbar |