IRFL9014PBF Vishay/IR
Hersteller: Vishay/IRP-канальний ПТ; Udss, В = 60; Id = 1,8 A; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 270 пФ; Qg, нКл = 12 @ 10 В; Rds = 500 мОм @ 1.1 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 @ 250 мкА; SOT-223
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 1.67 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.82 EUR |
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Technische Details IRFL9014PBF Vishay/IR
Description: MOSFET P-CH 60V 1.8A SOT223, Packaging: Tube, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V.
Weitere Produktangebote IRFL9014PBF nach Preis ab 18.23 EUR bis 18.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRFL9014PBF | Hersteller : IR |
Транзистор SOT-223 -60V Single P-Channel HEXFET Power MOSFET |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL9014PBF | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 |
Produkt ist nicht verfügbar |
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IRFL9014PBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 1.8A SOT223 Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
Produkt ist nicht verfügbar |