auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.40 EUR |
| 10000+ | 0.38 EUR |
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Technische Details IRFL9014TRPBF-BE3 Vishay
Description: MOSFET P-CH 60V 1.8A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V.
Weitere Produktangebote IRFL9014TRPBF-BE3 nach Preis ab 0.53 EUR bis 1.97 EUR
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IRFL9014TRPBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 60V 1.8A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFL9014TRPBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 1.8A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
auf Bestellung 2919 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFL9014TRPBF-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs SOT223 PCHA N60V |
auf Bestellung 144836 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFL9014TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 3453 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL9014TRPBF-BE3 | Hersteller : VISHAY |
Description: VISHAY - IRFL9014TRPBF-BE3 - MOSFET, P-CH, 60V, 1.8A, SOT-223 tariffCode: 85412900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 4Pin(s) euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 3453 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFL9014TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| IRFL9014TRPBF-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.1A Pulsed drain current: -14A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| IRFL9014TRPBF-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; Idm: -14A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.1A Pulsed drain current: -14A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |