IRFL9110TRPBF-BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 2500+ | 1.24 EUR |
| 5000+ | 1.22 EUR |
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Technische Details IRFL9110TRPBF-BE3 Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Weitere Produktangebote IRFL9110TRPBF-BE3 nach Preis ab 0.51 EUR bis 4.14 EUR
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IRFL9110TRPBF-BE3 | Vishay |
Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 2303 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL9110TRPBF-BE3 | Vishay / Siliconix |
MOSFETs SOT223 100V 1.1A P-CH MOSFET |
auf Bestellung 40501 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFL9110TRPBF-BE3 | Vishay Siliconix |
Description: MOSFET P-CH 100V 1.1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 5948 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFL9110TRPBF-BE3 | VISHAY |
Description: VISHAY - IRFL9110TRPBF-BE3 - MOSFET, P-CH, 100V, 1.1A, SOT-223 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 4Pin(s) euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 2298 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRFL9110TRPBF-BE3 | Vishay Siliconix |
P-канальний ПТ, Udss, В = 100, Id = 1,1 А, Ciss, пФ @ Uds, В = 200 @ 25, Qg, нКл = 8,7 @ 10 В, Rds = 1,2 Ом @ 660 мA, 10 В, Ugs(th) = 4 В @ 250 мкА, Р, Вт = 2, 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-223 Очікується: 50 Од. Anzahl je Verpackung: 2500 Stücke |
verfügbar 5 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| IRFL9110TRPBF-BE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 2303 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 1.79 EUR |
| 100+ | 1.68 EUR |
| 250+ | 1.58 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.42 EUR |
| IRFL9110TRPBF-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs SOT223 100V 1.1A P-CH MOSFET
MOSFETs SOT223 100V 1.1A P-CH MOSFET
auf Bestellung 40501 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.43 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.63 EUR |
| 2500+ | 0.57 EUR |
| 5000+ | 0.51 EUR |
| IRFL9110TRPBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Description: MOSFET P-CH 100V 1.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 5948 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.14 EUR |
| 10+ | 2.68 EUR |
| 100+ | 1.84 EUR |
| 500+ | 1.5 EUR |
| IRFL9110TRPBF-BE3 |
|
Hersteller: VISHAY
Description: VISHAY - IRFL9110TRPBF-BE3 - MOSFET, P-CH, 100V, 1.1A, SOT-223
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Anzahl der Pins: 4Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
Description: VISHAY - IRFL9110TRPBF-BE3 - MOSFET, P-CH, 100V, 1.1A, SOT-223
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Anzahl der Pins: 4Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
auf Bestellung 2298 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRFL9110TRPBF-BE3 |
|
Hersteller: Vishay Siliconix
P-канальний ПТ, Udss, В = 100, Id = 1,1 А, Ciss, пФ @ Uds, В = 200 @ 25, Qg, нКл = 8,7 @ 10 В, Rds = 1,2 Ом @ 660 мA, 10 В, Ugs(th) = 4 В @ 250 мкА, Р, Вт = 2, 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-223 Очікується: 50 Од.
Anzahl je Verpackung: 2500 Stücke
P-канальний ПТ, Udss, В = 100, Id = 1,1 А, Ciss, пФ @ Uds, В = 200 @ 25, Qg, нКл = 8,7 @ 10 В, Rds = 1,2 Ом @ 660 мA, 10 В, Ugs(th) = 4 В @ 250 мкА, Р, Вт = 2, 3,1, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-223 Очікується: 50 Од.
Anzahl je Verpackung: 2500 Stücke
verfügbar 5 Stücke:
Im Einkaufswagen
Stück im Wert von UAH