IRFL9110TRPBF-BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Description: MOSFET P-CH 100V 1.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.84 EUR |
| 5000+ | 0.8 EUR |
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Technische Details IRFL9110TRPBF-BE3 Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Weitere Produktangebote IRFL9110TRPBF-BE3 nach Preis ab 0.85 EUR bis 3.03 EUR
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IRFL9110TRPBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 1.1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 5793 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFL9110TRPBF-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 2447 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL9110TRPBF-BE3 | Hersteller : Vishay / Siliconix | MOSFET 100V P-CH MOSFET (D-S) |
auf Bestellung 62006 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFL9110TRPBF-BE3 | Hersteller : VISHAY |
Description: VISHAY - IRFL9110TRPBF-BE3 - MOSFET, P-CH, 100V, 1.1A, SOT-223 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 0 euEccn: NLR Verlustleistung: 0 Bauform - Transistor: SOT-223 Anzahl der Pins: 0 Produktpalette: 0 productTraceability: No Kanaltyp: P Channel Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 2447 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFL9110TRPBF-BE3 | Hersteller : Vishay Siliconix | P-канальний ПТ; Udss, В = 100; Id = 1,1 А; Ciss, пФ @ Uds, В = 200 @ 25; Qg, нКл = 8,7 @ 10 В; Rds = 1,2 Ом @ 660 мA, 10 В; Ugs(th) = 4 В @ 250 мкА; Р, Вт = 2; 3,1; Тексп, °C = -55...+150; Тип монт. = smd; SOT-223 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL9110TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| IRFL9110TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| IRFL9110TRPBF-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.1A; Idm: -8.8A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -1.1A Pulsed drain current: -8.8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| IRFL9110TRPBF-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.1A; Idm: -8.8A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -1.1A Pulsed drain current: -8.8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |