IRFM120ATF ON Semiconductor
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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4000+ | 0.63 EUR |
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Technische Details IRFM120ATF ON Semiconductor
Description: MOSFET N-CH 100V 2.3A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V.
Weitere Produktangebote IRFM120ATF nach Preis ab 0.73 EUR bis 1.91 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFM120ATF | Hersteller : onsemi / Fairchild | MOSFET 100V Single |
auf Bestellung 15980 Stücke: Lieferzeit 343-357 Tag (e) |
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IRFM120ATF Produktcode: 129782 |
Transistoren > MOSFET N-CH |
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IRFM120ATF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IRFM120ATF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IRFM120ATF | Hersteller : ON Semiconductor | Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IRFM120ATF | Hersteller : onsemi |
Description: MOSFET N-CH 100V 2.3A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFM120ATF | Hersteller : onsemi |
Description: MOSFET N-CH 100V 2.3A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V |
Produkt ist nicht verfügbar |