IRFN214BTA_FP001 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 250V 600MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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Technische Details IRFN214BTA_FP001 onsemi
Description: MOSFET N-CH 250V 600MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).