IRFP048NPBF International Rectifier
Hersteller: International RectifierDescription: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 281+ | 1.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFP048NPBF International Rectifier
Description: IRFP048 - 12V-300V N-CHANNEL POW, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Weitere Produktangebote IRFP048NPBF nach Preis ab 1.15 EUR bis 1.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
IRFP048NPBF | Hersteller : Infineon Technologies |
Description: IRFP048 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 34892 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
 |
IRFP048NPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 64A 3-Pin(3+Tab) TO-247AC Tube |
auf Bestellung 34687 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
IRFP048NPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFP048NPBF - IRFP048 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 29064 Stücke: Lieferzeit 14-21 Tag (e) |
|||||
 |
IRFP048NPBF Produktcode: 121696
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller : IR |
Transistoren > MOSFET N-CH Uds,V: 55 V Idd,A: 64 A Rds(on), Ohm: 0,016 Ohm Ciss, pF/Qg, nC: 1900/89 JHGF: THT |
Produkt ist nicht verfügbar
|
|||||
 |
IRFP048NPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 64A TO247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||
 |
IRFP048NPBF | Hersteller : Infineon / IR |
MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC |
Produkt ist nicht verfügbar |