IRFP064VPBF

IRFP064VPBF Infineon Technologies


irfp064vpbf.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 130A 3-Pin(3+Tab) TO-247AC
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Technische Details IRFP064VPBF Infineon Technologies

Description: MOSFET N-CH 60V 130A TO247AC, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 78A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6760 pF @ 25 V.

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IRFP064VPBF IRFP064VPBF Hersteller : Infineon Technologies IRFP064VPbF.pdf Description: MOSFET N-CH 60V 130A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 78A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6760 pF @ 25 V
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IRFP064VPBF IRFP064VPBF Hersteller : Infineon / IR irfp064v-1169427.pdf MOSFET 60V 1 N-CH HEXFET 5.5mOhms 173.3nC
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