Technische Details IRFP4232PBF IR
Description: MOSFET N-CH 250V 60A TO247AC, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 35.7mOhm @ 42A, 10V, Power Dissipation (Max): 430W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7290 pF @ 25 V.
Weitere Produktangebote IRFP4232PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IRFP4232PBF | Hersteller : IR |
 TO-247 |
auf Bestellung 491841 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP4232PBF Produktcode: 32427
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Transistoren > MOSFET N-CH |
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IRFP4232PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 60A 3-Pin(3+Tab) TO-247AC T/R |
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IRFP4232PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 250V 60A TO247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 35.7mOhm @ 42A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7290 pF @ 25 V |
Produkt ist nicht verfügbar |