IRFP460LCPBF VISHAY
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 8.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFP460LCPBF VISHAY
Description: MOSFET N-CH 500V 20A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V, Power Dissipation (Max): 280W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
Weitere Produktangebote IRFP460LCPBF nach Preis ab 4.46 EUR bis 12.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRFP460LCPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRFP460LCPBF | Hersteller : Vishay Semiconductors | MOSFET 500V N-CH HEXFET |
auf Bestellung 1949 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
IRFP460LCPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
auf Bestellung 588 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
IRFP460LCPBF | Hersteller : Vishay/IR | TO-247 |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
IRFP460LCPBF Produktcode: 22653 |
Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 500 Idd,A: 20 Rds(on), Ohm: 0.27 Ciss, pF/Qg, nC: 3600/120 JHGF: THT |
Produkt ist nicht verfügbar
|
||||||||||||||||||
IRFP460LCPBF | Hersteller : Vishay | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRFP460LCPBF | Hersteller : Vishay | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRFP460LCPBF | Hersteller : Vishay | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |