IRFPG50
Hersteller:
N-кан. HEXFEX TO-247 , U=1000В, I=6,1A Транзистори
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Technische Details IRFPG50
Description: MOSFET N-CH 1000V 6.1A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247AC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IRFPG50
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRFPG50 | Vishay Siliconix |
 Description: MOSFET N-CH 1000V 6.1A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRFPG50 | Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRFP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFPG50 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 6.1A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 1000V 6.1A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFPG50 | |
|
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT IRFP
MOSFETs RECOMMENDED ALT IRFP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH