IRFPW4468PBFXKSA1 Infineon Technologies
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.43 EUR |
| 10+ | 5.95 EUR |
| 100+ | 4.82 EUR |
| 480+ | 4.28 EUR |
| 1200+ | 3.66 EUR |
| 2640+ | 3.45 EUR |
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Technische Details IRFPW4468PBFXKSA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V, Power Dissipation (Max): 3.8W (Ta), 517W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO247-3-U06, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 50 V.
Weitere Produktangebote IRFPW4468PBFXKSA1 nach Preis ab 4 EUR bis 8.55 EUR
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IRFPW4468PBFXKSA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Power Dissipation (Max): 3.8W (Ta), 517W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 50 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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