IRFR010PBF Vishay Semiconductors
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.41 EUR |
| 27+ | 1.93 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.34 EUR |
| 9000+ | 1.33 EUR |
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Technische Details IRFR010PBF Vishay Semiconductors
Description: MOSFET N-CH 50V 8.2A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D-Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.
Weitere Produktangebote IRFR010PBF nach Preis ab 1.51 EUR bis 3.59 EUR
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IRFR010PBF | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 50V 8.2A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
auf Bestellung 3015 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRFR010PBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Gate-source voltage: ±20V Pulsed drain current: 33A Kind of channel: enhanced Case: DPAK; TO252 Drain-source voltage: 50V Drain current: 8.2A On-state resistance: 0.2Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IRFR010PBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Gate-source voltage: ±20V Pulsed drain current: 33A Kind of channel: enhanced Case: DPAK; TO252 Drain-source voltage: 50V Drain current: 8.2A On-state resistance: 0.2Ω |
Produkt ist nicht verfügbar |