| Anzahl | Privatkunde |
|---|---|
| 66+ | 2.74 EUR |
| 73+ | 2.38 EUR |
| 100+ | 2.23 EUR |
| 250+ | 2.06 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
66 Stücke
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Technische Details IRFR010PBF Vishay
Description: MOSFET N-CH 50V 8.2A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.
Weitere Produktangebote IRFR010PBF nach Preis ab 1.12 EUR bis 3.88 EUR
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IRFR010PBF | Vishay |
 Trans MOSFET N-CH 50V 8.2A 3-Pin(2+Tab) DPAK |
auf Bestellung 2572 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR010PBF | Vishay Siliconix |
Description: MOSFET N-CH 50V 8.2A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
auf Bestellung 2278 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR010PBF | Vishay Semiconductors |
MOSFETs TO252 N-CH 50V 8.2A |
auf Bestellung 2805 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFR010PBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 50V 8.2A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 50V 8.2A 3-Pin(2+Tab) DPAK
auf Bestellung 2572 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 2.74 EUR |
| IRFR010PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 8.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: MOSFET N-CH 50V 8.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 2278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.09 EUR |
| 75+ | 1.76 EUR |
| 150+ | 1.52 EUR |
| 525+ | 1.34 EUR |
| 1050+ | 1.18 EUR |
| 2025+ | 1.17 EUR |
| IRFR010PBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO252 N-CH 50V 8.2A
MOSFETs TO252 N-CH 50V 8.2A
auf Bestellung 2805 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.88 EUR |
| 10+ | 1.75 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.23 EUR |
| 3000+ | 1.18 EUR |
| 6000+ | 1.12 EUR |