IRFR1205TRPBF Infineon Technologies
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.6 EUR |
| 4000+ | 0.33 EUR |
| 10000+ | 0.31 EUR |
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Technische Details IRFR1205TRPBF Infineon Technologies
Description: MOSFET N-CH 55V 44A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRFR1205TRPBF nach Preis ab 0.31 EUR bis 3.02 EUR
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 273 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1205TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 69W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 37A Power dissipation: 69W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1823 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR1205TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 69W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 37A Power dissipation: 69W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
auf Bestellung 1823 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3927 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 762 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 762 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 44A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 316 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC |
auf Bestellung 19773 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFR1205TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRFR1205TRPBF - Leistungs-MOSFET, n-Kanal, 55 V, 44 A, 0.027 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.027ohm |
auf Bestellung 551 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 273 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFR1205 | Hersteller : International Rectifier |
N-MOSFET HEXFET 44A 55V 107W 0.027Ω IRFR1205 TIRFR1205 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFR1205 | Hersteller : International Rectifier |
N-MOSFET HEXFET 44A 55V 107W 0.027Ω IRFR1205 TIRFR1205 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR1205 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 44A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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IRFR1205TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 44A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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IRFR1205 Produktcode: 150970 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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