IRFR13N15DPBF

IRFR13N15DPBF Infineon Technologies


infineon-irfr13n15d-datasheet-v01_01-en.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 150V 14A 3-Pin(2+Tab) DPAK Tube
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Technische Details IRFR13N15DPBF Infineon Technologies

Description: MOSFET N-CH 150V 14A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 8.3A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: D-Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V.

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IRFR13N15DPBF IRFR13N15DPBF Hersteller : International Rectifier irfr13n15dpbf.pdf?fileId=5546d462533600a40153562d4bbc205a Description: MOSFET N-CH 150V 14A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.3A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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IRFR13N15DPBF IRFR13N15DPBF Hersteller : Infineon / IR Infineon_IRFR13N15D_DataSheet_v01_01_EN-1228327.pdf MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC
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