IRFR13N20DPBF-IR International Rectifier
Hersteller: International Rectifier
Description: MOSFET N-CH 200V 13A DPAK
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
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Technische Details IRFR13N20DPBF-IR International Rectifier
Description: MOSFET N-CH 200V 13A DPAK, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5.5V @ 250µA.