IRFR1N60APBF-BE3 Vishay / Siliconix
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.34 EUR |
| 3000+ | 1.21 EUR |
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Technische Details IRFR1N60APBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V.
Weitere Produktangebote IRFR1N60APBF-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IRFR1N60APBF-BE3 | Vishay Siliconix |
 Description: MOSFET N-CH 600V 1.4A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRFR1N60APBF-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IRFR1N60APBF-BE3 | Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFR1N60APBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR1N60APBF-BE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR1N60APBF-BE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH