IRFR1N60APBF VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14nC
Pulsed drain current: 5.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 98+ | 0.74 EUR |
| 117+ | 0.61 EUR |
| 124+ | 0.58 EUR |
| 150+ | 0.56 EUR |
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Produktbewertung abgeben
Technische Details IRFR1N60APBF VISHAY
Description: MOSFET N-CH 600V 1.4A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V.
Weitere Produktangebote IRFR1N60APBF nach Preis ab 0.58 EUR bis 3.43 EUR
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IRFR1N60APBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 14nC Pulsed drain current: 5.6A |
auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 1.4A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V |
auf Bestellung 3021 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay Semiconductors |
MOSFETs N-Chan 600V 1.4 Amp |
auf Bestellung 706 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |