| Anzahl | Preis |
|---|---|
| 268+ | 0.55 EUR |
| 276+ | 0.51 EUR |
| 282+ | 0.48 EUR |
| 525+ | 0.46 EUR |
| 1050+ | 0.44 EUR |
| 2025+ | 0.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFR1N60APBF Vishay
Description: MOSFET N-CH 600V 1.4A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V.
Weitere Produktangebote IRFR1N60APBF nach Preis ab 0.46 EUR bis 3.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRFR1N60APBF | Vishay |
 Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 2440 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 5.6A Gate charge: 14nC |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR1N60APBF | Vishay Semiconductors |
MOSFETs N-Chan 600V 1.4 Amp |
auf Bestellung 2270 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR1N60APBF | Vishay Siliconix |
Description: MOSFET N-CH 600V 1.4A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V |
auf Bestellung 2716 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR1N60APBF | Vishay |
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 91 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFR1N60APBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 268+ | 0.55 EUR |
| 276+ | 0.52 EUR |
| 282+ | 0.5 EUR |
| 525+ | 0.48 EUR |
| 1050+ | 0.47 EUR |
| 2025+ | 0.46 EUR |
| IRFR1N60APBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 148+ | 0.99 EUR |
| 159+ | 0.89 EUR |
| 167+ | 0.82 EUR |
| IRFR1N60APBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 89+ | 0.81 EUR |
| 108+ | 0.67 EUR |
| 150+ | 0.59 EUR |
| IRFR1N60APBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 106+ | 1.38 EUR |
| 127+ | 1.14 EUR |
| 150+ | 1 EUR |
| IRFR1N60APBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 600V 1.4 Amp
MOSFETs N-Chan 600V 1.4 Amp
auf Bestellung 2270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.64 EUR |
| 10+ | 1.39 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 1.02 EUR |
| IRFR1N60APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
auf Bestellung 2716 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.64 EUR |
| 75+ | 1.66 EUR |
| 150+ | 1.49 EUR |
| 525+ | 1.26 EUR |
| 1050+ | 1.16 EUR |
| 2025+ | 1.08 EUR |
| IRFR1N60APBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)