Produkte > VISHAY SILICONIX > IRFR1N60ATRPBF-BE3
IRFR1N60ATRPBF-BE3

IRFR1N60ATRPBF-BE3 Vishay Siliconix

sihfr1n6.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
auf Bestellung 1869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+2.10 EUR
100+1.61 EUR
500+1.28 EUR
1000+1.16 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IRFR1N60ATRPBF-BE3 Vishay Siliconix

Description: MOSFET N-CH 600V 1.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V.

Weitere Produktangebote IRFR1N60ATRPBF-BE3 nach Preis ab 1.02 EUR bis 2.80 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 Hersteller : Vishay / Siliconix sihfr1n6.pdf MOSFETs TO252 600V 1.4A N-CH MOSFET
auf Bestellung 3822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.80 EUR
10+2.13 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.14 EUR
2000+1.05 EUR
10000+1.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 Hersteller : Vishay sihfr1n6.pdf Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 Hersteller : Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH