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IRFR220TRRPBF

IRFR220TRRPBF Vishay Semiconductors

sihfr220.pdf Hersteller: Vishay Semiconductors
MOSFETs TO252 200V 4.8A N-CH MOSFET
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.61 EUR
10+1.17 EUR
100+0.81 EUR
500+0.66 EUR
1000+0.57 EUR
3000+0.52 EUR
6000+0.47 EUR
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Technische Details IRFR220TRRPBF Vishay Semiconductors

Description: MOSFET N-CH 200V 4.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.

Weitere Produktangebote IRFR220TRRPBF nach Preis ab 1.06 EUR bis 3.22 EUR

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IRFR220TRRPBF IRFR220TRRPBF Hersteller : Vishay Siliconix sihfr220.pdf Description: MOSFET N-CH 200V 4.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
10+2.06 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.06 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFR220TRRPBF IRFR220TRRPBF Hersteller : Vishay sihfr220.pdf Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R
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IRFR220TRRPBF IRFR220TRRPBF Hersteller : Vishay sihfr220.pdf Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R
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IRFR220TRRPBF IRFR220TRRPBF Hersteller : Vishay Siliconix sihfr220.pdf Description: MOSFET N-CH 200V 4.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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IRFR220TRRPBF Hersteller : VISHAY sihfr220.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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