
IRFR320TRLPBF VISHAY

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 400V
Drain current: 2A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
auf Bestellung 1779 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
106+ | 0.68 EUR |
138+ | 0.52 EUR |
146+ | 0.49 EUR |
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Technische Details IRFR320TRLPBF VISHAY
Description: MOSFET N-CH 400V 3.1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote IRFR320TRLPBF nach Preis ab 0.47 EUR bis 2.89 EUR
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IRFR320TRLPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252 Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 400V Drain current: 2A On-state resistance: 1.8Ω Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1779 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR320TRLPBF | Hersteller : Vishay Semiconductors |
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auf Bestellung 1605 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR320TRLPBF | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR320TRLPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFR320TRLPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR320TRLPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |