Technische Details IRFR3607PBF
- MOSFET, N, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:75V
- Cont Current Id:56A
- On State Resistance:7.34mohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:DPAK
- Termination Type:SMD
- Power Dissipation:140W
- Pulse Current Idm:310A
- Transistor Case Style:D-PAK
Weitere Produktangebote IRFR3607PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRFR3607PBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 75V 56A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFR3607PBF | Hersteller : Infineon / IR |
MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC |
Produkt ist nicht verfügbar |