IRFR3710ZTRPBF Infineon Technologies
auf Bestellung 104000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.72 EUR |
| 4000+ | 0.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFR3710ZTRPBF Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRFR3710ZTRPBF nach Preis ab 0.55 EUR bis 3.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IRFR3710ZTRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
IRFR3710ZTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 104000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
IRFR3710ZTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
IRFR3710ZTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 42A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IRFR3710ZTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of channel: enhancement Kind of package: reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2501 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
IRFR3710ZTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
auf Bestellung 2501 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
IRFR3710ZTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
IRFR3710ZTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 42A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 4993 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IRFR3710ZTRPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 100V 56A 18mOhm 69nC Qg |
auf Bestellung 5412 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IRFR3710ZTRPBF | Hersteller : INFINEON |
Description: INFINEON - IRFR3710ZTRPBF - Leistungs-MOSFET, n-Kanal, 100 V, 42 A, 0.015 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 42A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2354 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
IRFR3710ZTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IRFR3710ZTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |