IRFR4105ZPBF Infineon
Produktcode: 177671
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Lieblingsprodukt
Hersteller: Infineon
Gehäuse: D-Pak (TO-252)
Uds,V: 55 V
Idd,A: 21 A
Rds(on), Ohm: 24,5 mOhm
Ciss, pF/Qg, nC: 740/18
JHGF: SMD
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Technische Details IRFR4105ZPBF Infineon
- MOSFET, N, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:55V
- Cont Current Id:30A
- On State Resistance:0.0245ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:DPAK
- Termination Type:SMD
- Alternate Case Style:TO-252
- Current Temperature:25`C
- External Depth:10.5mm
- External Length / Height:2.55mm
- External Width:6.8mm
- Full Power Rating Temperature:25`C
- Max Power Dissipation Ptot:48W
- Max Voltage Vds:55V
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation:48W
- Power Dissipation Pd:48W
- Pulse Current Idm:120A
- SMD Marking:IRFR4105ZPBF
- Transistor Case Style:D-PAK
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Verfügbarkeit |
Preis |
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IRFR4105ZPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFR4105ZPBF - IRFR4105 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
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IRFR4105ZPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 30A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IRFR4105ZPBF | Hersteller : Infineon Technologies |
MOSFETs 55V 1 N-CH HEXFET 24.5mOhms 18nC |
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