IRFR4510TRPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N CH 100V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFR4510TRPBF Infineon Technologies
Description: MOSFET N CH 100V 56A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 4V @ 100µA, Power Dissipation (Max): 143W (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRFR4510TRPBF nach Preis ab 0.93 EUR bis 2.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFR4510TRPBF | Infineon Technologies |
MOSFETs 100V 63A 13.9mOhm HEXFET 143W 54nC |
auf Bestellung 2028 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IRFR4510TRPBF | Infineon Technologies |
Description: MOSFET N CH 100V 56A DPAK Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 4V @ 100µA Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 19350 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFR4510TRPBF |
|
Hersteller: Infineon Technologies
MOSFETs 100V 63A 13.9mOhm HEXFET 143W 54nC
MOSFETs 100V 63A 13.9mOhm HEXFET 143W 54nC
auf Bestellung 2028 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.07 EUR |
| 2000+ | 0.94 EUR |
| 4000+ | 0.93 EUR |
| IRFR4510TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N CH 100V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N CH 100V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 19350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 10+ | 1.79 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.08 EUR |