Technische Details IRFR4615PBF
- MOSFET,N-CH 150V 33A DPAK
- Transistor Type:Power MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:150V
- Cont Current Id:21A
- On State Resistance:42mohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:5V
- Case Style:D-PAK
- Termination Type:SMD
- Operating Temperature Range:-55`C to +175`C
- Max Voltage Vgs th:5V
- No. of Pins:3
- Power Dissipation Pd:144W
- Transistor Case Style:D-PAK
Weitere Produktangebote IRFR4615PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRFR4615PBF | Hersteller : International Rectifier/Infineon |
 N-канальний ПТ, Udss, В = 150, Id = 33 А, Ciss, пФ @ Uds, В = 1750 пФ @ 50 В, Qg, нКл = 26 @ 10 В, Rds = 42 мОм @ 21 А, 10 В, Ugs(th) = 5 В @ 100 мкА, Р, Вт = 144 Вт, Тексп, °C = -55...+175, Тип монт. = smd,... Група товару: Транзистори Корпус: D-PAK Од. Anzahl je Verpackung: 75 Stücke |
verfügbar 24 Stücke: |
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| IRFR4615PBF | Hersteller : International Rectifier |
DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRFR4615PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 33A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFR4615PBF | Hersteller : Infineon Technologies |
MOSFETs 150V 1 N-CH HEXFET 42mOhms 26nC |
Produkt ist nicht verfügbar |