Technische Details IRFR5410PBF
- MOSFET, P, -100V, 13A, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:P
- Typ Voltage Vds:-100V
- Cont Current Id:13A
- On State Resistance:0.205ohm
- Voltage Vgs Rds on Measurement:-10V
- Typ Voltage Vgs th:-4V
- Case Style:DPAK
- Termination Type:SMD
- Alternate Case Style:D-PAK
- Junction to Case Thermal Resistance A:1.9`C/W
- Max Voltage Vds:100V
- On State resistance @ Vgs = 10V:205mohm
- Power Dissipation:66W
- Power Dissipation Pd:66W
- Pulse Current Idm:5.2A
- Transistor Case Style:D-PAK
Weitere Produktangebote IRFR5410PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRFR5410PBF | Hersteller : IR - ASA only Supplier |
 Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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IRFR5410PBF | Hersteller : Infineon Technologies |
Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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IRFR5410PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 100V 13A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR5410PBF | Hersteller : Infineon Technologies |
MOSFET 1 P-CH -100V HEXFET 205mOhms 70nC |
Produkt ist nicht verfügbar |