IRFR7746PBF Infineon Technologies
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details IRFR7746PBF Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V, Power Dissipation (Max): 99W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 100µA, Supplier Device Package: D-PAK (TO-252AA), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V.
Weitere Produktangebote IRFR7746PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IRFR7746PBF | Hersteller : International Rectifier Corporation |
DPAK/MOSFET, 75V, 56A |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR7746PBF | Hersteller : International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: D-PAK (TO-252AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR7746PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 56A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: D-PAK (TO-252AA) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V |
Produkt ist nicht verfügbar |