Produkte > VISHAY SILICONIX > IRFR9024PBF-BE3
IRFR9024PBF-BE3

IRFR9024PBF-BE3 Vishay Siliconix


sihfr902.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 60V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IRFR9024PBF-BE3 Vishay Siliconix

Description: P-CHANNEL 60V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V.

Weitere Produktangebote IRFR9024PBF-BE3 nach Preis ab 1.36 EUR bis 3.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRFR9024PBF-BE3 IRFR9024PBF-BE3 Hersteller : Vishay Siliconix sihfr902.pdf Description: P-CHANNEL 60V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.58 EUR
100+1.83 EUR
500+1.48 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024PBF-BE3 IRFR9024PBF-BE3 Hersteller : Vishay Semiconductors sihfr902.pdf MOSFETs TO252 P CHAN 60V
auf Bestellung 8600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.52 EUR
10+2.59 EUR
100+1.99 EUR
500+1.6 EUR
1000+1.48 EUR
3000+1.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024PBF-BE3 IRFR9024PBF-BE3 Hersteller : Vishay sihfr902.pdf Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH