IRFR9N20DTRPBF Infineon Technologies
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Technische Details IRFR9N20DTRPBF Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V.
Weitere Produktangebote IRFR9N20DTRPBF
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IRFR9N20DTRPBF | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK Case: DPAK Mounting: SMD Kind of package: reel Drain-source voltage: 200V Drain current: 9.4A Type of transistor: N-MOSFET Power dissipation: 86W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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IRFR9N20DTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 9.4A DPAK Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
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IRFR9N20DTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 9.4A DPAK Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
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IRFR9N20DTRPBF | Hersteller : Infineon / IR |
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC |
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IRFR9N20DTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK Case: DPAK Mounting: SMD Kind of package: reel Drain-source voltage: 200V Drain current: 9.4A Type of transistor: N-MOSFET Power dissipation: 86W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced |
Produkt ist nicht verfügbar |