Technische Details IRFS31N20DPBF Infineon Technologies
Description: MOSFET N-CH 200V 31A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V, Power Dissipation (Max): 3.1W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V.
Weitere Produktangebote IRFS31N20DPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IRFS31N20DPBF | Hersteller : International Rectifier |
 D2PAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| IRFS31N20DPBF | Hersteller : International Rectifier/Infineon |
N-канальний ПТ, Udss, В = 200, Id = 31 А, Ptot, Вт = 3,1, Тип монт. = smd, Ciss, пФ @ Uds, В = 2370 @ 25, Qg, нКл = 107 @ 10 В, Rds = 82 мОм @ 18 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 5,5 В @ 250 мкA,... Група товару: Транзистори Корпус: D2PAK Од. ви Anzahl je Verpackung: 50 Stücke |
Produkt ist nicht verfügbar |
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| IRFS31N20DPBF | Hersteller : JSMicro |
D2PAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRFS31N20DPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 31A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V Power Dissipation (Max): 3.1W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFS31N20DPBF | Hersteller : Infineon Technologies |
MOSFET 200V SINGLE N-CH 82mOhms 70nC |
Produkt ist nicht verfügbar |