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IRFS3607PBF

IRFS3607PBF ROCHESTER ELECTRONICS

irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176 Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IRFS3607PBF - IRFS3607 12V-300V N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IRFS3607PBF ROCHESTER ELECTRONICS

Description: MOSFET N-CH 75V 80A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V.

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IRFS3607PBF Hersteller : IR irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176 Транз. Пол. БМ N-MOSFET D2PAK Udss=75V; Id=80 A; Pdmax=140 W; Rds=0,09 Ohm
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1+3.8 EUR
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IRFS3607PBF IRFS3607PBF Hersteller : Infineon Technologies irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176 Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IRFS3607PBF IRFS3607PBF Hersteller : Infineon Technologies Infineon_IRFS3607_DataSheet_v01_01_EN-3363284.pdf MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC
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