IRFS4127PBF
Produktcode: 99017
Hersteller: IRGehäuse: D-Pak
Uds,V: 200
Idd,A: 72
Rds(on), Ohm: 18.6 mOhm
Ciss, pF/Qg, nC: 5380/100
JHGF: SMD
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Technische Details IRFS4127PBF IR
- MOSFET,N-CH 200V 72A D2PAK
- Transistor Type:Power MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:200V
- Cont Current Id:44A
- On State Resistance:22mohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:5V
- Case Style:D2-PAK
- Termination Type:SMD
- Operating Temperature Range:-55`C to +175`C
- Max Voltage Vgs th:5V
- No. of Pins:3
- Power Dissipation Pd:375W
- Transistor Case Style:D2-PAK
Weitere Produktangebote IRFS4127PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IRFS4127PBF | Hersteller : International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFS4127PBF | Hersteller : Infineon Technologies |
MOSFET 200V 1 N-CH HEXFET SWITCH |
Produkt ist nicht verfügbar |
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IRFS4127PBF | Hersteller : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 0.1µC Kind of channel: enhanced |
Produkt ist nicht verfügbar |