IRFS4227PBF International Rectifier/Infineon
Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 200, Id = 62 А, Ptot, Вт = 330, Тип монт. = smd, Ciss, пФ @ Uds, В = 4600 @ 25, Qg, нКл = 98 @ 10 В, Rds = 26 мОм @ 46 A, 10 В, Tексп, °C = -40...+175, Ugs(th) = 5 В @ 250 мкА,... Група товару: Транзистори Корпус: D2PAK Од. вим:
Anzahl je Verpackung: 50 Stücke
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Technische Details IRFS4227PBF International Rectifier/Infineon
Description: MOSFET N-CH 200V 62A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V.
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IRFS4227PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 62A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V |
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IRFS4227PBF | Hersteller : Infineon Technologies |
MOSFETs 200V 1 N-CH HEXFET PWR MOSFET 26mOhms |
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