IRFS4227PBF International Rectifier/Infineon
Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 200, Id = 62 А, Ptot, Вт = 330, Тип монт. = smd, Ciss, пФ @ Uds, В = 4600 @ 25, Qg, нКл = 98 @ 10 В, Rds = 26 мОм @ 46 A, 10 В, Tексп, °C = -40...+175, Ugs(th) = 5 В @ 250 мкА,... Транзистори Корпус: D2PAK Од. вим: шт
Anzahl je Verpackung: 50 Stücke
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Technische Details IRFS4227PBF International Rectifier/Infineon
Description: MOSFET N-CH 200V 62A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 330W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IRFS4227PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRFS4227PBF | Infineon Technologies |
Description: MOSFET N-CH 200V 62A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRFS4227PBF | Infineon Technologies |
MOSFETs 200V 1 N-CH HEXFET PWR MOSFET 26mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFS4227PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 62A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 200V 62A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS4227PBF |
|
Hersteller: Infineon Technologies
MOSFETs 200V 1 N-CH HEXFET PWR MOSFET 26mOhms
MOSFETs 200V 1 N-CH HEXFET PWR MOSFET 26mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH