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IRFS4227TRLPBF Infineon Technologies


irfs4227pbf.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 16800 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
800+1.46 EUR
2400+1.44 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRFS4227TRLPBF Infineon Technologies

Description: MOSFET N-CH 200V 62A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V.

Weitere Produktangebote IRFS4227TRLPBF nach Preis ab 1.41 EUR bis 5.91 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IRFS4227TRLPBF IRFS4227TRLPBF Infineon Technologies irfs4227pbf.pdf Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 16800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.47 EUR
2400+1.41 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4227TRLPBF IRFS4227TRLPBF Infineon Technologies irfs4227pbf.pdf?fileId=5546d462533600a401535639ef64219b Description: MOSFET N-CH 200V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.04 EUR
1600+1.9 EUR
2400+1.83 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4227TRLPBF IRFS4227TRLPBF Infineon Technologies irfs4227pbf.pdf Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
33+4.54 EUR
50+4.31 EUR
100+4.07 EUR
250+3.86 EUR
500+3.7 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4227TRLPBF IRFS4227TRLPBF Infineon Technologies irfs4227pbf.pdf?fileId=5546d462533600a401535639ef64219b Description: MOSFET N-CH 200V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
auf Bestellung 3123 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.91 EUR
10+3.84 EUR
100+2.66 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4227TRLPBF irfs4227pbf.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 16800 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
800+1.47 EUR
2400+1.41 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4227TRLPBF irfs4227pbf.pdf?fileId=5546d462533600a401535639ef64219b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+2.04 EUR
1600+1.9 EUR
2400+1.83 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4227TRLPBF irfs4227pbf.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
33+4.54 EUR
50+4.31 EUR
100+4.07 EUR
250+3.86 EUR
500+3.7 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4227TRLPBF irfs4227pbf.pdf?fileId=5546d462533600a401535639ef64219b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
auf Bestellung 3123 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+5.91 EUR
10+3.84 EUR
100+2.66 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH