IRFS59N10DTRLP Infineon Technologies
auf Bestellung 2504 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details IRFS59N10DTRLP Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRFS59N10DTRLP | Hersteller : Infineon |
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auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFS59N10DTRLP | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRFS59N10DTRLP | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 59A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
Produkt ist nicht verfügbar |