IRFS9N60ATRLPBF
Produktcode: 44716
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Weitere Produktangebote IRFS9N60ATRLPBF nach Preis ab 1.03 EUR bis 6.92 EUR
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IRFS9N60ATRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS9N60ATRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS9N60ATRLPBF | Hersteller : Vishay Semiconductors |
MOSFETs TO263 600V 9.2A N-CH MOSFET |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS9N60ATRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 9.2A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS9N60ATRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRFS9N60ATRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 9.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFS9N60ATRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 37A Gate charge: 49nC |
Produkt ist nicht verfügbar |