Weitere Produktangebote IRFSL11N50APBF nach Preis ab 1.53 EUR bis 7.08 EUR
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IRFSL11N50APBF | Hersteller : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Power dissipation: 190W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL11N50APBF | Hersteller : Vishay Semiconductors |
MOSFETs TO262 500V 11A N-CH MOSFET |
auf Bestellung 883 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFSL11N50APBF | Hersteller : Vishay |
Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRFSL11N50APBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 11A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6.6A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 25 V |
Produkt ist nicht verfügbar |