IRFSL4010PBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 181+ | 3.03 EUR |
| 500+ | 2.85 EUR |
| 1000+ | 2.63 EUR |
| 10000+ | 2.41 EUR |
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Technische Details IRFSL4010PBF Infineon Technologies
Description: MOSFET N-CH 100V 180A TO262, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V.
Weitere Produktangebote IRFSL4010PBF nach Preis ab 2.63 EUR bis 7.95 EUR
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IRFSL4010PBF | Infineon Technologies |
  Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4010PBF | Infineon Technologies |
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4010PBF | Infineon Technologies |
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4010PBF | Infineon Technologies |
MOSFETs MOSFT 100V 180A 4.7mOhm 143nC |
auf Bestellung 424 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL4010PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 180A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V |
auf Bestellung 2525 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL4010PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 375W Technology: HEXFET® |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFSL4010PBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 181+ | 3.03 EUR |
| 500+ | 2.85 EUR |
| 1000+ | 2.63 EUR |
| IRFSL4010PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 6.56 EUR |
| IRFSL4010PBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 6.57 EUR |
| IRFSL4010PBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 180A 4.7mOhm 143nC
MOSFETs MOSFT 100V 180A 4.7mOhm 143nC
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.09 EUR |
| 25+ | 3.84 EUR |
| 100+ | 3.5 EUR |
| 500+ | 2.92 EUR |
| 1000+ | 2.9 EUR |
| IRFSL4010PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO262
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Description: MOSFET N-CH 100V 180A TO262
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
auf Bestellung 2525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.57 EUR |
| 50+ | 3.91 EUR |
| 100+ | 3.56 EUR |
| 500+ | 2.93 EUR |
| 1000+ | 2.79 EUR |
| IRFSL4010PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |