IRFSL7434PBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 226A; 294W; TO262
Power dissipation: 294W
Case: TO262
Mounting: THT
Kind of package: tube
Technology: HEXFET®
Gate charge: 216nC
Polarisation: unipolar
Drain current: 226A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 226A; 294W; TO262
Power dissipation: 294W
Case: TO262
Mounting: THT
Kind of package: tube
Technology: HEXFET®
Gate charge: 216nC
Polarisation: unipolar
Drain current: 226A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.15 EUR |
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Technische Details IRFSL7434PBF INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 226A; 294W; TO262, Power dissipation: 294W, Case: TO262, Mounting: THT, Kind of package: tube, Technology: HEXFET®, Gate charge: 216nC, Polarisation: unipolar, Drain current: 226A, Kind of channel: enhanced, Drain-source voltage: 40V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 1.6mΩ.
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