Technische Details IRFU120PBF
- MOSFET, N, 100V, 7.7A, I-PAK
- Transistor Polarity:N
- Max Current Id:7.7A
- Max Voltage Vds:100V
- On State Resistance:0.27ohm
- Rds Measurement Voltage:10V
- Max Voltage Vgs:20V
- Power Dissipation:0W
- Operating Temperature Range:-55`C to +150`C
- Transistor Case Style:I-PAK
- Alternate Case Style:I-PAK
- Case Style:I-PAK
- Cont Current Id:7.7A
- Junction to Case Thermal Resistance A:0`C/W
- On State resistance @ Vgs = 10V:270ohm
- Power Dissipation Pd:42W
- Pulse Current Idm:31A
- Termination Type:Through Hole
- Transistor Type:MOSFET
- Turn Off Time, t Off:14ns
- Turn On Time, t On:27ns
- Typ Voltage Vds:100V
- Typ Voltage Vgs th:4V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRFU120PBF nach Preis ab 0.73 EUR bis 3.15 EUR
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IRFU120PBF | Hersteller : Vishay Semiconductors |
 MOSFETs TO251 100V 7.7A N-CH MOSFET |
auf Bestellung 4324 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU120PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A TO251AA Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) |
auf Bestellung 3680 Stücke: Lieferzeit 10-14 Tag (e) |
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