Technische Details IRFU13N20DPBF Infineon / IR
Description: MOSFET N-CH 200V 13A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V.
Weitere Produktangebote IRFU13N20DPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFU13N20DPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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IRFU13N20DPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: IPAK Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFU13N20DPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 13A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: IPAK (TO-251AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFU13N20DPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: IPAK Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |