IRFU214PBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Description: MOSFET N-CH 250V 2.2A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 3155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.2 EUR |
75+ | 1.76 EUR |
150+ | 1.4 EUR |
525+ | 1.19 EUR |
1050+ | 0.97 EUR |
2025+ | 0.91 EUR |
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Technische Details IRFU214PBF Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.
Weitere Produktangebote IRFU214PBF nach Preis ab 1.27 EUR bis 3.22 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRFU214PBF | Hersteller : Vishay Semiconductors | MOSFET 250V N-CH HEXFET I-PAK |
auf Bestellung 90 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFU214PBF | Hersteller : VISHAY |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFU214PBF | Hersteller : Vishay | Trans MOSFET N-CH 250V 2.2A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |
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IRFU214PBF | Hersteller : Vishay | Trans MOSFET N-CH 250V 2.2A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |
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IRFU214PBF | Hersteller : Vishay | Trans MOSFET N-CH 250V 2.2A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |
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IRFU214PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.2A Pulsed drain current: 8.8A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 8.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFU214PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.2A Pulsed drain current: 8.8A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Gate charge: 8.2nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |