IRFU2307ZPBF

IRFU2307ZPBF Infineon Technologies


infineon-irfr2307z-datasheet-v01_01-en.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 53A 3-Pin(3+Tab) IPAK
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Technische Details IRFU2307ZPBF Infineon Technologies

Description: MOSFET N-CH 75V 42A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V.

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IRFU2307ZPBF IRFU2307ZPBF Hersteller : Infineon Technologies irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074 Description: MOSFET N-CH 75V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
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IRFU2307ZPBF IRFU2307ZPBF Hersteller : Infineon / IR international rectifier_irfr2307zpbf-1169138.pdf MOSFET MOSFT 75V 53A 16mOhm 50nC Qg
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