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IRFU320PBF VISHAY


IRFU320PBF.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 20nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 572 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
53+1.36 EUR
81+0.89 EUR
90+0.8 EUR
99+0.73 EUR
150+0.7 EUR
525+0.65 EUR
Mindestbestellmenge: 53 Stücke
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Technische Details IRFU320PBF VISHAY

Description: MOSFET N-CH 400V 3.1A TO251AA, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.

Weitere Produktangebote IRFU320PBF nach Preis ab 0.88 EUR bis 3.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IRFU320PBF IRFU320PBF Vishay Semiconductors sihfr320.pdf MOSFETs N-Chan 400V 3.1 Amp
auf Bestellung 3688 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.15 EUR
10+1.48 EUR
100+1.19 EUR
500+1.06 EUR
1000+0.93 EUR
3000+0.91 EUR
6000+0.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFU320PBF IRFU320PBF Vishay Siliconix sihfr320.pdf Description: MOSFET N-CH 400V 3.1A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 2342 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
75+1.55 EUR
150+1.4 EUR
525+1.17 EUR
1050+1.08 EUR
2025+1 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFU320PBF sihfr320.pdf
Hersteller: Vishay Semiconductors
MOSFETs N-Chan 400V 3.1 Amp
auf Bestellung 3688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.15 EUR
10+1.48 EUR
100+1.19 EUR
500+1.06 EUR
1000+0.93 EUR
3000+0.91 EUR
6000+0.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFU320PBF sihfr320.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.1A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 2342 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.43 EUR
75+1.55 EUR
150+1.4 EUR
525+1.17 EUR
1050+1.08 EUR
2025+1 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH