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Technische Details IRFU5305PBF
- MOSFET, P, -55V, -28A, I-PAK
- Transistor Type:MOSFET
- Max Voltage Vds:55V
- On State Resistance:0.065ohm
- Power Dissipation:110W
- Transistor Case Style:I-PAK
- Alternate Case Style:I-PAK
- Avalanche Single Pulse Energy Eas:280mJ
- Case Style:I-PAK
- Cont Current Id:22A
- Current Iar:16A
- Current Temperature:25`C
- Fall Time Tf:63ns
- Full Power Rating Temperature:25`C
- Junction to Case Thermal Resistance A:1.8`C/W
- Lead Length:9.65mm
- Lead Spacing:2.28mm
- Max Junction Temperature Tj:175`C
- Max Repetitive Avalanche Energy:6.9mJ
- Max Voltage Vgs th:-4V
- Min Junction Temperature, Tj:-55`C
- Min Voltage Vgs th:-2V
- No. of Transistors:1
- On State resistance @ Vgs = 10V:0.065ohm
- Power Dissipation Pd:69W
- Pulse Current Idm:110A
- Rise Time:66ns
- Termination Type:Through Hole
- Transistor Polarity:P
- Turn Off Time, t Off:39ns
- Turn On Time, t On:14ns
- Typ Capacitance Ciss:1200pF
- Typ Voltage Vds:-55V
- Typ Voltage Vgs th:-4V
- Voltage Vgs Rds on Measurement:-10V
Weitere Produktangebote IRFU5305PBF nach Preis ab 0.5 EUR bis 2.62 EUR
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IRFU5305PBF | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: IPAK Mounting: THT Kind of channel: enhancement |
auf Bestellung 915 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU5305PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 31A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK (TO-251AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 9002 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU5305PBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT P-Ch -55V -28A 65mOhm 42nC |
auf Bestellung 7281 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU5305PBF | Hersteller : INFINEON |
Description: INFINEON - IRFU5305PBF - Leistungs-MOSFET, p-Kanal, 55 V, 22 A, 0.065 ohm, TO-251AA, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 55V rohsCompliant: Y-EX Dauer-Drainstrom Id: 22A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 69W SVHC: Lead (25-Jun-2025) Bauform - Transistor: TO-251AA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.065ohm |
auf Bestellung 2795 Stücke: Lieferzeit 14-21 Tag (e) |