IRFU5505 International Rectifier
Hersteller: International RectifierTransistor P-MOSFET; 55V; 20V; 110mOhm; 18A; 57W; -55°C ~ 150°C; Replacement: IRFU5505; IRFU5505 TIRFU5505
Anzahl je Verpackung: 25 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 1.38 EUR |
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Technische Details IRFU5505 International Rectifier
Description: MOSFET P-CH 55V 18A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V.
Weitere Produktangebote IRFU5505
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IRFU5505 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 18A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK (TO-251AA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
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