IRFU5505 International Rectifier
Hersteller: International Rectifier
Transistor P-MOSFET; 55V; 20V; 110mOhm; 18A; 57W; -55°C ~ 150°C; Replacement: IRFU5505; IRFU5505 TIRFU5505
Anzahl je Verpackung: 25 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 1.44 EUR |
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Technische Details IRFU5505 International Rectifier
Description: MOSFET P-CH 55V 18A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: IPAK (TO-251AA), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 57W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote IRFU5505
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRFU5505 | Infineon Technologies |
Description: MOSFET P-CH 55V 18A IPAK Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK (TO-251AA) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 525 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFU5505 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 18A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET P-CH 55V 18A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 525 Stücke
Im Einkaufswagen
Stück im Wert von UAH