IRFU9014 Infineon

Транз. Пол. БМ P-MOSFET IPAK (TO-251AA) Udss=-55V; Id=-18A; Pdmax=57W; Rds=0,11 Ohm
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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1+ | 5.28 EUR |
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Technische Details IRFU9014 Infineon
Description: MOSFET P-CH 60V 5.1A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V.
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IRFU9014 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
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IRFU9014 | Hersteller : Vishay / Siliconix |
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Produkt ist nicht verfügbar |